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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMZ7 NPN/PNP general purpose transistors
Product data sheet Supersedes data of 2001 Sep 25 2001 Nov 07
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
FEATURES * 300 mW total power dissipation * Very small 1.6 x 1.2 mm ultra thin package * Self alignment during soldering due to straight leads * Low collector capacitance * Low VCEsat * High current capabilities * Improved thermal behaviour due to flat leads * Reduced required PCB area * Reduced pick and place costs. APPLICATIONS * Heavy duty battery powered equipment (automotive, telecom and audio-video) such as motor and lamp drivers * VCEsat critical applications such as latest low supply voltage IC applications * All battery driven equipment, to save battery power. DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT666 plastic package. MARKING TYPE NUMBER PEMZ7 MARKING CODE Z7
1
Top view
handbook, halfpage 6
PEMZ7
PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
5
4
6
5
4
TR2 TR1
2
3
MAM456
1
2
3
Fig.1 Simplified outline (SOT666) and symbol.
2001 Nov 07
2
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - - - - - Tamb 25 C; note 1 - -65 - -65 Tamb 25 C; note 1 - MIN. MAX.
PEMZ7
UNIT
Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416 UNIT K/W total power dissipation 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 15 12 6 500 1 100 200 +150 150 +150 V V V mA A mA mW C C C
2001 Nov 07
3
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - - 200 - TYP. - - - - -
PEMZ7
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity ICBO IEBO hFE VCEsat fT collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage transition frequency TR1 (NPN) TR2 (PNP) Cc collector capacitance TR1 (NPN) TR2 (PNP) VCB = 10 V; IE = Ie = 0; f = 1 MHz - - 4.4 - 6 10 pF pF VCB = 15 V; IE = 0 VCB = 15 V; IE = 0; Tj = 150 C VEB = 5 V; IC = 0 VCE = 2 V; IC = 10 mA IC = 200 mA; IB = 10 mA IC = 100 mA; VCE = 5 V; f = 100 MHz 100 50 100 - 220 mV nA A nA
250 100
420 280
- -
MHz MHz
handbook, halfpage
600
MHC014
handbook, halfpage (1)
1200 IC
MLD672
hFE 500
(4)
(3)
(2)
(1)
(mA) 800
(2) (5) (6)
400
300
(7) (8)
200
(3)
400
(9)
100
(10)
0 10-1
1
10
102 IC (mA)
103
0 0 2 4 6 8 10 VCE (V)
TR1 (NPN); Tamb = 25 C. TR1 (NPN); VCE = 2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. (1) IB = 4.60 mA (2) IB = 4.14 mA (3) IB = 3.68 mA (4) IB = 3.22 mA (5) (6) (7) (8) IB = 2.76 mA IB = 2.30 mA IB = 1.84 mA IB = 1.38 mA (9) IB = 0.92 mA (10) IB = 0.46 mA
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Collector current as a function of collector-emitter voltage; typical values.
2001 Nov 07
4
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
handbook, halfpage
1200 VBE 1000
MLD673
handbook, halfpage
1200
MHC017
(mV)
VBEsat (mV)
1000
(1) (1)
800
(2)
800
(2)
600
(3)
600
(3)
400
400
200 10-1
1
10
102
IC (mA)
103
200 10-1
1
10
102 IC (mA)
103
TR1 (NPN); VCE = 2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
TR1 (NPN); IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.4
Base-emitter voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
103 handbook, halfpage VCEsat (mV) 102
MHC018
handbook, halfpage
600
MHC019
hFE 500
(1)
400
300
(1)
(2)
10
(2) (3)
200
(3)
100
1 10-1
1
10
102 IC (mA)
103
0 -10-1
-1
-10
-102 -103 IC (mA)
TR1 (NPN); IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
TR2 (PNP); VCE = -2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.6
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.7
DC current gain as a function of collector current; typical values.
2001 Nov 07
5
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
handbook, halfpage
-1200 IC (mA) -800
MLD650
handbook, halfpage (4) (3) (2) (1)
-1200 VBE (mV) -1000
MLD667
(5) (6) (7) (8)
(1)
-800
(2)
-600
-400
(9) (3) (10)
-400
0 0
-2
-4
-6
-8
TR2 (PNP); Tamb = 25 C. (1) (2) (3) (4) IB = 7.0 mA IB = 6.3 mA IB = 5.6 mA IB = 4.9 mA (5) IB = 4.2 mA (6) IB = 3.5 mA (7) IB = 2.8 mA (8) IB = 2.1 mA
-10 VCE (V)
-200 -10-1
-1
-10
-102
-103 IC (mA)
(9) IB = 1.4 mA (10) IB = 0.7 mA
TR2 (PNP); VCE = -2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.8
Collector current as a function of collector-emitter voltage; typical values.
Fig.9
Base-emitter voltage as a function of collector current; typical values.
handbook, halfpage
-1200
MHC022
VBEsat (mV)
-103 handbook, halfpage VCEsat (mV) -102
(1)
MHC023
-1000
-800
(1)
(2)
(2) (3)
-600 -10 -400
(3)
-200 -10-1
-1
-10
-102
IC (mA)
-103
-1 -10-1
-1
-10
-102 -103 IC (mA)
TR2 (PNP); IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
TR2 (PNP); IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.10 Base-emitter saturation voltage as a function of collector current; typical values.
Fig.11 Collector-emitter saturation voltage as a function of collector current; typical values.
2001 Nov 07
6
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PACKAGE OUTLINE
PEMZ7
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
YS HE
6
5
4
pin 1 index A
1
e1 e
2
bp
3
wMA Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
OUTLINE VERSION SOT666
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-01-04 01-08-27
2001 Nov 07
7
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
PEMZ7
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
2001 Nov 07
8
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/02/pp9 Date of release: 2001 Nov 07 Document order number: 9397 750 09054

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